Recently, Liu Zewen, professor of Micro-Nano Institute of Tsinghua University, and Deng Tao, associate professor of School of Electronics and Information Engineering, Beijing Jiaotong University, jointly published a three-dimensional graphene field effect tube based on the internationally renowned academic journal Nano Letters. Research paper on "Three-Dimensional Graphene Field-Effect Transistors as High Performance Photodetectors". In this paper, a self-curling method is used to fabricate a microtubular three-dimensional graphene field effect transistor (3D GFET), which can be used as a photoelectric sensor to achieve ultra-high sensitivity and ultra-high sensitivity to ultraviolet, visible, mid-infrared and terahertz waves. Quick detection. Schematic diagram of high performance photoelectric sensor based on three-dimensional graphene field effect tube Photoelectric sensors are the core components of many fields such as optical communication, imaging, and sensing. Graphene has the unique zero bandgap structure and ultra-fast carrier mobility, making it an ideal material for manufacturing high performance photosensors. Traditional graphene photosensors mostly use a planar two-dimensional (2D) GFET structure with ultra-wide bandwidth and ultra-fast response speed. However, the single-layer graphene absorbs light at a rate of only 2.3%, resulting in a low response (~6.3 mA/W) for 2D GFET photosensors. Although the combination of graphene and photosensitive materials can greatly improve the responsiveness of the photoelectric sensor, the bandwidth and response speed are seriously impaired. This study proposes a method for driving a 2D GFET self-crimping into a microtubular 3D GFET structure using a silicon nitride stress layer, which is the first to produce a coiled layer (1-5) and a radius (30 μm-65 μm). Controlled array of 3D GFET devices. This 3D GFET can be used as a photosensor with an operating wavelength range extending from the ultraviolet (325 nm) region to the terahertz (119 μm) region, which is the most widely reported graphene-based photosensor bandwidth. At the same time, this 3D GFET combines ultra-high responsiveness and ultra-fast response speed with responsiveness of more than 1 A/W in the ultraviolet to visible region and 0.23 A/W in the terahertz region. The response time is as fast as 265 ns (nanoseconds). The manufacturing method proposed by the research institute not only paves the way for the realization of 3D graphene optoelectronic devices and systems, but also can be extended to other graphene 2D crystal materials such as molybdenum disulfide and black phosphorus. The reviewer highly praised the research results and believed that the research was of great significance to the entire 2D material research field. The first author of the paper is the 2015 graduate of the Department of Micro-Nano Electronics of Tsinghua University, and now associate professor Deng Tao of the School of Electronics and Information Engineering of Beijing Jiaotong University. Professor Liu Zewen from the Institute of Micro-Nano Electronics of Tsinghua University and Associate Professor Deng Tao from the School of Electronics and Information Engineering of Beijing Jiaotong University are the authors of the paper. The research was supported by the National Natural Science Foundation of China, the Beijing Natural Science Foundation, and the Central University's basic research business fee program. Stained Color Rubber Chemical Granules
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